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VDRM ITGQM ITSM V(T0) rT VDC-link
= = = = = =
6500 4200 26x103 2.0 0.54 4000
V A A V m V
Asymmetric Integrated GateCommutated Thyristor
5SHY 42L6500
PRELIMINARY
Doc. No. 5SYA1245-00 Aug 07
* High snubberless turn-off rating * Wide temperature range * High electromagnetic immunity * Simple control interface with status feedback * AC or DC supply voltage * Option for series connection (contact factory)
Blocking
Maximum rated values
1)
Parameter Symbol Conditions Rep. peak off-state voltage VDRM Gate Unit energized Permanent DC voltage for VDC-link 100 FIT failure rate of GCT Reverse voltage
Characteristic values
min
typ
max 6500 4000 17
Unit V V V Unit mA
Ambient cosmic radiation at sea level in open air. Gate Unit energized
VRRM min typ
Parameter Symbol Conditions Rep. peak off-state current IDRM VD = VDRM, Gate Unit energized
max 50
Mechanical data (see Fig. 11, 12) 1)
Maximum rated values
Parameter Mounting force
Characteristic values
Symbol Conditions Fm Symbol Conditions Dp 0.1 mm H m Ds Da l h Anode to Gate Anode to Gate 1.0 mm 1.0 mm
min 36 min 25.3 33 10
typ 40 typ 85
max 44 max 25.8 2.9
Unit kN Unit mm mm kg mm mm
Parameter Pole-piece diameter Housing thickness Weight Surface creepage distance Air strike distance Length Height
439 40 173
mm mm mm
Width IGCT w 1.0 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SHY 42L6500
GCT Data
On-state (see Fig.1)3, 4, 5, 6, 14, 15)
Maximum rated values
Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge on-state current Limiting load integral Max. peak non-repetitive surge on-state current Limiting load integral Max. peak non-repetitive surge on-state current Limiting load integral Stray inductance between GCT and antiparallel diode Critical rate of rise of onstate current
Characteristic values
Symbol Conditions IT(AV)M Half sine wave, TC = 85 C, Double side cooled IT(RMS) ITSM I2t ITSM I2t ITSM I2t LD diT/dtcr Only relevant for applications with antiparallel diode to the IGCT For higher diT/dt and current lower than 100 A an external retrigger puls is required. tp = 30 ms, Tj = 125 C, sine wave after surge: VD = VR = 0 V tp = 10 ms, Tj = 125 C, sine wave after surge: VD = VR = 0 V tp = 3 ms, Tj = 125 C, sine wave after surge: VD = VR = 0 V
min
typ
max 1270 2000 40x10
3
Unit A A A A2s A
6
2.4x10 26x10
6
3
3.38x10 17x10
3
A2s A
4.34x10 300 200
6
A2s nH A/s
Parameter On-state voltage Threshold voltage Slope resistance
Symbol Conditions VT IT = 4000 A, Tj = 125 C V(T0) rT Tj = 125 C IT = 1000...5000 A
min
typ 3.8 1.9 0.48
max 4.1 2.0 0.54
Unit V V m
Turn-on switching 1)
Maximum rated values
(see Fig. 14, 15) Symbol Conditions diT/dtcr f = 0..500 Hz,Tj = 125 C,IT = 3900 A VD = 4000 V, ITM 5500 A Symbol Conditions tdon VD = 4000 V, Tj = 125 C IT = 4000 A, di/dt = VD / Li tdon SF Li = 4 H CCL = 20 F, LCL = 0.3 H tr Eon min typ max 1000 Unit A/s
Parameter Critical rate of rise of onstate current
Characteristic values
Parameter Turn-on delay time Turn-on delay time status feedback Rise time Turn-on energy per pulse
Maximum rated values
min
typ
max 4 7 1 2.5
Unit s s s J
Turn-off switching (see Fig. 7, 8, 10, 14, 15) 1)
Parameter Max. controllable turn-off current Max. controllable turn-off current
Characteristic values
Symbol Conditions ITGQM1 VDM VDRM, Tj = 125C, ITGQM2 RS = 0.35 , CCL = 20 F, LCL 0.3 H
min VD = 4000 V
ton > 100s
typ
max 4200 3900
Unit A A
VD = 4000 V
40s < ton < 100s
Parameter Turn-off delay time Turn-off delay time status feedback Turn-off energy per pulse
Symbol Conditions tdoff VD = 4000 V, Tj = 125 C tdoff SF VDM VDRM, RS = 0.35 ITGQ = 4000 A, Li = 4 H CCL = 20 F, LCL = 0.3 H Eoff
min
typ
max 8 7
Unit s s J
44
tbd
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1245-00 Aug 07 page 2 of 9
5SHY 42L6500
Gate Unit Data
Maximum rated values
Power supply (see Fig. 2, 9, 10, 12, 13) 1)
Parameter Gate Unit voltage (Connector X1) Min. current needed to power up the Gate Unit
Characteristic values
Symbol Conditions VGIN,RMS AC square wave amplitude (15 kHz - 100kHz) or DC voltage. No galvanic isolation to power circuit. IGIN Min Rectified average current see application note 5SYA 2031
min 28
typ
max 40
Unit V
2 130 min typ max 8
A W Unit A
Gate Unit power consumption PGIN Max Parameter Internal current limitation Symbol Conditions IGIN Max Rectified average current limited by the Gate Unit
Maximum rated values
Optical control1)input/output 2)
Parameter Min. on-time Min. off-time
Characteristic values
Symbol Conditions ton toff Symbol Conditions Pon CS CS: Command signal Poff CS SF: Status feedback Valid for 1mm plastic optical fiber P
on SF
min 40 40 min -15 -19
typ
max
Unit s s
Parameter Optical input power Optical noise power Optical output power Optical noise power Pulse width threshold External retrigger pulse width
typ
max -1 -45 -1 -50 400
Unit dBm dBm dBm dBm ns ns
Poff SF tretrig
(POF)
tGLITCH Max. pulse width without response 600
1100
2) Do not disconnect or connect fiber optic cables while light is on.
Connectors 2) (see Fig. 11, 12, 13)
Parameter Gate Unit power connector LWL receiver for command signal LWL transmitter for status feedback Symbol Description 3) X1 AMP: MTA-156, Part Number 641210-5 CS SF Avago, Type HFBR-2528 Avago, Type HFBR-1528
4) 4)
2) Do not disconnect or connect fiber optic cables while light is on. 3) AMP, www.amp.com 4) Avago Technologies, www.avagotech.com
Visual feedback (see Fig. 13)
Parameter Gate OFF Gate ON Fault Power supply voltage OK Symbol Description LED1 "Light" when GCT is off LED2 LED3 LED4 "Light" when gate-current is flowing "Light" when not ready / Failure "Light" when power supply is within specified range Color (green) (yellow) (red) (green)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1245-00 Aug 07 page 3 of 9
5SHY 42L6500
Thermal
Maximum rated values
1)
Parameter Junction operating temperature Storage temperature range Ambient operational temperature
Characteristic values
Symbol Tvj Tstg Ta
Conditions
min 0 0 0
typ
max 125 60 50
Unit C C C Unit K/kW K/kW
Parameter Symbol Thermal resistance junction-to-case Rth(j-c) of GCT Thermal resistance case-toheatsink of GCT Rth(c-h)
Conditions Double side cooled Double side cooled
min
typ
max 8.5 3
Analytical function for transient thermal impedance:
Z th(j-c) (t) = Ri(1 - e-t/ i )
i=1
i Ri(K/kW) i(s) 1 5.562 0.5119 2 1.527 0.0896 3 0.868 0.0091 4 0.545 0.0024 Fig. 1 Transient thermal impedance (junction-tocase) vs. time (max. values) Max. Turn-off current for Lifetime operation
n
* * *
calculated lifetime of on-board capacitors 20 years with slightly forced air cooling (air velocity > 0.5 m/s) strong air cooling allows for increased ambient temperature
Fig. 2 Max. turn-off current vs. frequency for lifetime operation
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1245-00 Aug 07 page 4 of 9
5SHY 42L6500
Max. on-state characteristic model: Max. on-state characteristic model:
VT25 = ATvj + BTvj IT + CTvj ln(IT + 1) + DTvj IT
A25
Max. Typ.
VT125 = ATvj + BTvj IT + CTvj ln(IT + 1) + DTvj IT
Valid for iT = 300 - 30000 A A125
Max. Typ. -281.3x10-3 -260.7x10-3
Valid for iT = 300 - 30000 A B25 C25
279.5x10-6 259.1x10-6 322.7x10-3 299.1x10-3
D25
-483.3x10-18 407.0x10-18
B125
394.6x10-6 365.8x10-6
C125
338.2x10-3 313.4x10-3
D125
822.5x10-18 500.3x10-18
-220.9x10-3 -204.8x10-3
Fig. 3 GCT on-state voltage characteristics
Fig. 4 GCT on-state voltage characteristics
Fig. 5 Surge on-state current vs. pulse length, halfsine wave
Fig. 6 Surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50 Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1245-00 Aug 07 page 5 of 9
5SHY 42L6500
Fig. 7 GCT turn-off energy per pulse vs. turn-off current
Fig. 8 Safe Operating Area
Fig. 9 Max. Gate Unit input power in chopper mode
Fig. 10 Burst capability of Gate Unit
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1245-00 Aug 07 page 6 of 9
5SHY 42L6500
Fig. 11 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise
1) VGIN (AC or DC+) 2) VGIN (AC or DC+) 3) Cathode 4) VGIN (AC or DC-) 5) VGIN (AC or DC-) Fig. 12 Detail A: pin out of supply connector X1
AS-IGCT Gate Unit
Supply (VGIN)
AS-GCT
X1
Internal Supply (No galvanic isolation to power circuit)
Anode
LED1 LED2 LED3 LED4
TurnOn Circuit Rx Logic Monitoring
Gate
CS SF
Command Signal (Light)
Status Feedback (Light)
Tx
TurnOff Circuit
Cathode
Fig. 13 Block diagram
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1245-00 Aug 07 page 7 of 9
5SHY 42L6500
Turn-on
dIT/dt ITM VD 0.9 VD
External Retrigger pulse
VDSP IT
Turn-off
VDM VD
IT
0.4 ITGQ 0.1 VD VD
CS
CS
CS
SF tdon SF tdon tr
SF tretrig
SF tdoff SF tdoff
ton
toff
Fig. 14 General current and voltage waveforms with IGCT - specific symbols
Li LCL LD
Rs
DUT
VDC
CCL LLoad
Fig. 15 Test circuit
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1245-00 Aug 07 page 8 of 9
5SHY 42L6500
Related documents:
5SYA 2031 5SYA 2032 5SYA 2036 5SYA 2046 5SYA 2048 5SYA 2051 5SZK 9107 Applying IGCT Gate Units Applying IGCTs Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Failure rates of IGCTs due to cosmic rays Field measurements on High Power Press Pack Semiconductors Voltage ratings of high power semiconductors Specification of enviromental class for pressure contact IGCTs, OPERATION available on request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. No. 5SYA1245-00 Aug 07

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